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Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array
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Exploiting total internal reflection geometry for deep broadband terahertz modulation using a GaAs Schottky diode with integrated subwavelength metal microslits
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Capacitance of a Schottky diode at reverse bias (-0.3V) after different... | Download Scientific Diagram
Development of on-wafer calibration methods and planar Schottky diode characterisation at THz frequencies
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Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
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Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors | Scientific Reports
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Air-bridged Schottky diodes for dynamically tunable millimeter-wave metamaterial phase shifters | Scientific Reports
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